Fabrication of suspended dielectric mirror structures via xenon difluoride etching of an amorphous germanium sacrificial layer

The authors present a simplified fabrication method for the creation of free-standing dielectric mirrors for use in monolithic wavelength tunable surface-normal photonic devices, including vertical-cavity surface emitting lasers. This process utilizes a nonplasma dry etching process, based on the noble gas halide, xenon difluoride XeF2 , to remove an inorganic sacrificial film comprised of low-temperature deposited amorphous germanium -Ge . By utilizing nonplasma dry etching of an inorganic film, this procedure circumvents the need for critical point drying and avoids the limitations imposed by polymer-based sacrificial layers. In this procedure the authors observe remarkably rapid lateral etching, with rates in excess of 150 m /min for electron-beam evaporated -Ge films. The viability of this novel surface micromachining process is demonstrated by presenting the static and dynamic mechanical characteristics of electrostatically actuated suspended dielectric Bragg reflectors. © 2008 American Vacuum Society. DOI: 10.1116/1.2890673